| Nd dopant: | 0.2 ~ 3 atm% |
| Width x Height: | 1x1 ~ 16x16mm |
| Length: | 0.02 ~ 20mm |
Specifications:
| Orientation: | a-cut( ± 0.55° ) |
| Dimensional Tolerance: | +/-0.1mm |
| Wavefront Distortion: | <λ/8 at 632.8nm |
| Surface Quality: | 20/10 |
| Parallelism: | < 10 arc seconds |
| Perpendicularity: | < 5 arc minutes |
| Surface Flatness: | <λ/10 at 632.8nm |
| Clear Aperture: | Central 95% |
| Chamfer: | 0.15x45° |
| Coating: | 1.AR@1064nm R<0.1% 2.AR@1064nm R< 0.1% & HT@808nm T>95% 3.HR@1064nm R>99.8% & HR@532nm R>99% & HT@808nm T>95% |
| Crystal Structure | Zircon Tetragonal, space group D4h, a=b=7.21, c=6.35 |
| Melting Point | 1780°C |
| Density | 5.47g/cm3 |
| Mohs Hardness | Glass-like, ~ 5 |
| Thermal Expansion Coefficient | aa=1.5x10-6/K, ac=7.3x10-6/K |
| Thermal Conductivity Coefficient | 11.7 W/m/K <110> |
| Peak Absorption Wavelength | 808.5 nm |
| Lasing Wavelength | 912.6 nm, 1063.1 nm, 1341.3 nm |
| Crystal Class | positive uniaxial, no=na=nb ne=nc no=1.9854, ne=2.1981, @ 1064nm no=2.038184, ne=2.292962, @ 532nm no=1.9977322, ne=2.219864, @ 808nm |
| Thermal Optical Coefficient | dn/dT=4.7x10-6/K |
| Stimulated Emission Cross-Section | 7.60x10-19cm2 , @1064 nm |
| Fluorescent Lifetime | 95 ms (1 atm% nd doped) @ 808 nm |
| Loss Coefficient | 0.003 cm-1@ 1064 nm |
| Absorption Coefficient | 74 cm-1 @ 808 nm (1.2%) |
| Absorption Length | 0.32 mm @ 808 nm |
| Intrinsic Loss | Less 0.1% cm-1 , @1064 nm |
| Linewidth | 0.6 nm |
| Polarized Laser Emission | p parallel to optic axis (c-axis) |
| Diode Pumped Optical to Optical Efficiency |
> 60% |
Sellmeier Equation (for pure GdVO4 crystals)
ne2=4.734369+0.1216149/(l2 - 0.0523664) - 0.013927l2
no2=3.8987165+0.05990622/(l2 - 0.0514395) - 0.011319l2